首页> 外文期刊>Journal of Electronic Materials >Effect of Silver Flakes in Silver Paste on the Joining Process and Properties of Sandwich Power Modules (IGBTs Chip/Silver Paste/Bare Cu)
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Effect of Silver Flakes in Silver Paste on the Joining Process and Properties of Sandwich Power Modules (IGBTs Chip/Silver Paste/Bare Cu)

机译:银浆中的银片对夹层功率模块(IGBT芯片/银浆/裸露的铜)的接合过程和性能的影响

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摘要

In this study, a silver paste has been introduced for attaching chips onto bare Cu substrates (without coating) without applying pressure. Small nano-thickness Ag flakes, measuring 1 mu m-5 mu m length, were embedded uniformly in Ag nanoparticles for improving the density of the material. The presence of silver flakes in the silver paste affected the joining process and its microstructure. Microstructure characterization revealed that densification of the silver layer was affected by the presence of silver flakes as the flakes coarsened and formed reactive in situ nanoparticles, which facilitated the sintering between the flakes and the incorporated nanoparticles. Coarsening of silver flakes depended on the sintering temperature, time, and the atmosphere, which affected the decomposition and burning out of organics presented on the surface of the flakes. A high-density silver layer was obtained due to the presence of compact silver flakes. With an increase in the microstructure density, a higher bonding strength and a lower thermal impedance of the sintered joints were achieved. On performing pressureless sintering at 270A degrees C for 30 min under 99.99% N-2 or 4% H-2/N-2, the bonding strength and thermal impedance for 11 x 11 mm(2) chips were excellent, measuring approximately 21.9 MPa and 0.077A degrees C/W, respectively.
机译:在这项研究中,引入了一种银浆,用于在不施加压力的情况下将芯片附着到裸露的Cu基板(无涂层)上。将尺寸为1μm至5μm的纳米级Ag薄片均匀地包埋在Ag纳米颗粒中,以提高材料的密度。银浆中银薄片的存在影响了连接过程及其微结构。微观结构表征表明,随着薄片的粗化和形成反应性原位纳米粒子,银薄片的致密化受到薄片状银的存在的影响,这促进了薄片与掺入的纳米粒子之间的烧结。银薄片的粗化取决于烧结温度,时间和气氛,这会影响薄片表面上存在的有机物的分解和烧尽。由于存在致密的银薄片,获得了高密度的银层。随着微观结构密度的增加,实现了烧结接头的更高的结合强度和更低的热阻。在99.99%N-2或4%H-2 / N-2下在270A摄氏度下进行30分钟的无压烧结时,11 x 11 mm(2)芯片的结合强度和热阻非常好,测量约为21.9 MPa和0.077A C / W。

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