A high power density multichip phase-leg IGBT module with void-free die attachment using nanosilver paste

摘要

This paper presents the design, development, and evaluation of a high power, i.e., 1200-V/600-A, double-sided multichip phase-leg IGBT module with the purpose of increasing power density compared with conventional wire-bonded IGBT modules. Nanosilver paste is chosen as the die-attach material so as to increase the maximum application temperature by avoiding the creep failure at high temperatures compared with traditional solders. Four large-area 1200-V/150-A IGBT chips, i.e., 12.56 mm × 12.56 mm, and four 1200-V/150-A free-wheeling diodes are connected in parallels on one DBC substrate as one bridge. The dimensions of the as-fabricated double-sided IGBT module are only 70 mm × 59 mm × 4.05 mm. Finally, static and dynamic electrical performance of the proposed IGBT module are characterized under different current levels.