Offset Compensation for Sensing of Ferroelectric Memory Cells

摘要

Methods, systems, and devices for operating one or more ferroelectric memory cells are described, wherein the threshold voltage offsets of switching components (eg, transistors) connected to digit lines are different operating techniques or It can be compensated by using additional circuit components, or both. For example, switching components connected to digit lines can also be connected to an offset capacitor selected to compensate for threshold voltage offset. The offset capacitor may be discharged in conjunction with the read operation to provide a threshold voltage applied to the switching component. This may allow all or substantially all of the stored charge of the ferroelectric memory cell to be extracted and transferred through the transistor to the sense capacitor. The sense amplifier may compare the voltage on the sense capacitor to a reference voltage to determine the stored logic state of the memory cell. [Selected figure] Figure 4