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Wafer support, SiC epitaxial wafer manufacturing apparatus and method including the same
Wafer support, SiC epitaxial wafer manufacturing apparatus and method including the same
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机译:晶片支撑体,SiC外延晶片制造装置以及包括该晶片支撑体的方法
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摘要
PROBLEM TO BE SOLVED: To provide a wafer support, a manufacturing device, and a manufacturing method, capable of efficiently and sufficiently reducing epitaxial crowning and also capable of making a carrier concentration in a wafer surface uniform.SOLUTION: A wafer support of the present invention is a wafer support used in a chemical vapor deposition device that grows an epitaxial film on a principal surface of a wafer by a chemical vapor deposition method. The wafer support has: a wafer-mounting surface on the top face of which a substrate is mounted; and a wafer-supporting part that rises up so as to surround the periphery of a wafer to be mounted. The height from a portion farthest from the wafer-mounting surface on the top surface of the wafer-support part on a reaction space side to the principal surface of the wafer mounted on the wafer-mounting surface is 1 mm or more. At least a part of the wafer-support part is formed of a material containing a part of constituent elements of the epitaxial film.SELECTED DRAWING: Figure 1
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