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Enhanced field bipolar resistive RAM integrated with FDSOI technology
Enhanced field bipolar resistive RAM integrated with FDSOI technology
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机译:集成了FDSOI技术的增强型场双极电阻式RAM
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摘要
A resistive random access memory stack is formed on a surface of a faceted drain-side structure that is present on one side of a functional gate structure. The functional gate structure and the faceted drain-side structure are located on a topmost surface of a fully depleted semiconductor channel material layer. In some embodiments, the resistive random access memory stack includes a bottom electrode, a resistive switching layer and a top electrode. In other embodiments, the resistive random access memory stack includes a resistive switching layer and a top electrode. In such an embodiment, a drain-side metal semiconductor alloy of the faceted drain-side structure is used as the bottom electrode of the resistive random access memory device.
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