Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology

摘要

In this paper we explore the impact of the parasitic bipolar in undoped channel Ultra-Thin BOX (UTBOX) with and without Ground Plane (CP) on a 32 nm Fully-Depleted SOI (FDSOI) high-k/metal gate technology. The static parasitic bipolar latch occurs at a drain bias superior to the circuit operation alimentation. The several type of ground plane and forward or reverse back biasing do not modify significantly the bipolar breakdown voltage. The thicker EOT gate oxide is more sensible to parasitic bipolar breakdown. Finally, results have been reinforced by using calibrated TCAD simulation tool.