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Method for quickly establishing lithography process condition by a pre-compensation value

机译:通过预补偿值快速建立光刻工艺条件的方法

摘要

The present invention discloses a method for quickly establishing lithography process condition by a pre-compensation value, comprising: firstly determining a reference process condition of masks of which parameters are same, and then determining an optimum process condition of the first mask; thereafter, calculating a ratio of the optimum process condition of the first mask deviating from the reference process condition, wherein if the ratio is equal to or larger than a set threshold, the first mask is inspected, and if the ratio is less than the set threshold, an optimum process condition of the second mask is determined according to the ratio and the reference process condition of the second mask; and by analogy, determining optimum process conditions of the rest masks. The method of the present invention can quickly establish a lithograph process condition, reduce the trial production time for determining the optimum defocus amount and exposure amount.
机译:本发明公开了一种通过预补偿值快速建立光刻工艺条件的方法,包括:首先确定参数相同的掩模的参考工艺条件,然后确定第一掩模的最佳工艺条件;此后,计算偏离参考工艺条件的第一掩模的最佳工艺条件的比率,其中,如果该比率等于或大于设定的阈值,则检查第一掩模,并且如果该比率小于设定的阈值阈值,根据第二掩模的比例和参考工艺条件确定第二掩模的最佳工艺条件。以此类推,确定其余面罩的最佳工艺条件。本发明的方法可以快速建立光刻工艺条件,减少用于确定最佳散焦量和曝光量的试生产时间。

著录项

  • 公开/公告号US10409170B2

    专利类型

  • 公开/公告日2019-09-10

    原文格式PDF

  • 申请/专利权人 SHANGHAI HUALI MICROELECTRONICS CORPORATION;

    申请/专利号US201715800043

  • 发明设计人 QIAOLI CHEN;ZHENGKAI YANG;

    申请日2017-10-31

  • 分类号G03F7/20;G03F1/26;G03F1/36;G03F1/50;G03F1/42;G03F1/30;

  • 国家 US

  • 入库时间 2022-08-21 12:12:16

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