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Unconventional Processing And Characterization Methods In Lithography

机译:光刻中的非常规处理和表征方法

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摘要

As lithography moves toward feature sizes of 22 nm and smaller and pushing for applications beyond the semiconductor industry, unconventional processing and characterization methods are in demand for patterning of unusual structures, new processing techniques, and better understanding and control of resist performance. Chapter 1 introduces conventional lithographic processing and characterization methods and their unconventional counterparts as well. As a typical lithographic process includes exposure, post-exposure bake, and development, chapters 2, 3 and the appendix cover some unconventional processing methods. Chapter 2 discusses a laser heating method for exposed chemically amplified photoresists in an attempt to control acid diffusion during postexposure bake and thus improve pattern resolution and quality. Chapter 3 details supercritical carbon dioxide as an environmentally friendly and sustainable solvent to develop high resolution resist patterns. Two photon lithography is demonstrated in the appendix as a direct write technique to introduce three dimensional defects inside photonic materials. While conventional characterization of the materials and/or patterns is usually carried out before and after the lithographic process, an in situ FTIR method is discussed in chapter 4 as a technique to monitor reaction-diffusion kinetics of acids in chemically amplified molecular glass resists during post-exposure bake and to understand the molecular architectural effect on the kinetics.
机译:随着光刻技术朝着22 nm和更小的特征尺寸发展,并推动了半导体工业以外的应用,非常规的处理和表征方法需要对异常结构进行图案化,采用新的处理技术以及更好地理解和控制抗蚀剂性能。第1章介绍了传统的光刻处理和表征方法,以及它们的非常规对应方法。由于典型的光刻工艺包括曝光,曝光后烘烤和显影,因此第2、3章和附录涵盖了一些非常规的处理方法。第2章讨论了用于曝光的化学放大光刻胶的激光加热方法,以试图控制曝光后烘烤期间的酸扩散,从而提高图案分辨率和质量。第3章详细介绍了超临界二氧化碳,它是一种环保且可持续的溶剂,可以形成高分辨率的抗蚀剂图案。附录中展示了两种光子光刻技术,作为一种直接写入技术,可在光子材料内部引入三维缺陷。虽然通常在平版印刷术之前和之后对材料和/或图案进行常规表征,但第4章讨论了原位FTIR方法,该方法可监测化学放大分子玻璃抗蚀剂中酸在后处理过程中酸的反应扩散动力学。 -烘烤并了解分子结构对动力学的影响。

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  • 作者

    Sha Jing;

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  • 年度 2010
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  • 原文格式 PDF
  • 正文语种 en_US
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