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MAGNETIC STRUCTURE OF MAGNETIC TUNNEL JUNCTION DEVICE, MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
MAGNETIC STRUCTURE OF MAGNETIC TUNNEL JUNCTION DEVICE, MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
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机译:磁隧道结装置的磁结构,磁隧道结装置和磁随机访问存储器
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摘要
The disclosed technology generally relates to magnetic devices, and more particular to a magnetic structure, and a magnetic tunnel junction device and a magnetic random access memory including the magnetic structure. According to an aspect, a magnetic structure for a magnetic tunnel junction (MTJ) device includes a free layer, a tunnel barrier layer, a reference layer, a hard magnetic layer, and an inter-layer stack arranged between the hard magnetic layer and the reference layer. The inter-layer stack includes a first ferromagnetic sub-layer, a second ferromagnetic sub-layer and a non-magnetic spacer sub-layer. The non-magnetic spacer sub-layer is arranged in contact with and between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer and is adapted to provide a ferromagnetic coupling of a magnetization of the first ferromagnetic sub-layer and a magnetization of the second ferromagnetic sub-layer. A magnetization direction of the reference layer is fixed by the hard magnetic layer and the inter-layer stack.
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