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IINTEGRATED CIRCUIT DEVICE INCLUDING ASYMMETRICAL FIN FIELD-EFFECT TRANSISTOR
IINTEGRATED CIRCUIT DEVICE INCLUDING ASYMMETRICAL FIN FIELD-EFFECT TRANSISTOR
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机译:包括不对称鳍式场效应晶体管的集成电路器件
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摘要
An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.
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