Magnetic tunnel junction device utilizing lattice strain

摘要

A magnetic tunnel junction device includes a Heusler alloy layer that has not only a perpendicular magnetic anisotropy characteristic, but also a half-metallicity characteristic. For example, the magnetic tunnel junction device includes at least one Heusler alloy layer and a barrier layer. The barrier layer is in contact with the Heusler alloy layer and has an insulating property. A compressive strain is exerted on the Heusler alloy layer in a direction parallel to an interface between the Heusler alloy layer and the barrier layer.