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Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing such a Semiconductor Component
Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing such a Semiconductor Component
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机译:具有重组区域的半导体本体的制造方法,具有重组区域的半导体部件以及该半导体部件的制造方法
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摘要
A first part of a semiconductor body is provided. Impurities are introduced into the first part of the semiconductor body, The impurities act as recombination centers in the semiconductor body and form a recombination Zone, and the impurities include at least a heavy metal. A second part of the semiconductor body is epitaxially produced on the first part after introducing the impurities in the first part. During epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body.
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