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Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
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机译:具有复合区域的半导体本体的制造方法,具有复合区域的半导体部件以及该半导体部件的制造方法
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摘要
In a method for producing a semiconductor body, impurities which act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body. In a semiconductor component, comprising a semiconductor body having a front surface and an opposite rear surface, and also a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centers, the surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone.
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