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Non-volatile transistor element including a buried ferroelectric material based storage mechanism
Non-volatile transistor element including a buried ferroelectric material based storage mechanism
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机译:包括基于埋入铁电材料的存储机制的非易失性晶体管元件
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摘要
The present disclosure provides storage elements, such as storage transistors, wherein at least one storage mechanism is provided on the basis of a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, one further storage mechanism is implemented in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism in the gate electrode structure is provided in the form of a ferroelectric material.
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