TRANSISTOR TYPE FERROELECTRIC NON-VOLATILE STORAGE ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve integration, and at the same time, to improve reliability in a ferroelectric transistor having MFMIS (conductor films-ferroelectric films- conductor films-insulating films-semiconductors) structure. SOLUTION: In a gate insulator capacitor made of MIS structure, a low permittivity layer inhibition layer 2 is interposed between the insulating film 3 made of a material having high permittivity of CeO2 and a semiconductor substrate 1 to inhibit the generation of a low-permittivity layer such as an SiO2 at the interface between the insulating film 3 and semiconductor substrate 1, and to inhibit reduction in capacity. The area of the gate insulator capacitor can be reduced to improve integration.