NON-VOLATILE TRANSISTOR ELEMENT COMPRISING A MEMORY MECHANISM BASED ON A VERTICAL FERROELECTRIC MATERIAL

摘要

The present disclosure provides storage elements, such as memory transistors, in which at least one storage mechanism is provided based on a ferroelectric material formed in the buried insulating layer of an SOI transistor architecture. In further illustrative embodiments, a further memory mechanism is established in the gate electrode structure, thereby providing increased overall information density. In some illustrative embodiments, the storage mechanism is provided in the gate electrode structure in the form of a ferroelectric material.