机译:用于高密度非易失性存储器的低温生长的过渡金属氧化物基存储材料和氧化物晶体管
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Nano Fabrication Group Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Nano Fabrication Group Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Nano Fabrication Group Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
Oxide Device Croup Samsung Advanced Institute of Technology Gyeonggi-Do 449-711 (Korea);
机译:基于海绵的还原型氧化石墨烯和过渡金属氢氧化物的混合材料的开发,用于混合储能装置
机译:一种无成立的HFO2- / ofon基电阻栅极金属氧化物 - 半导体场效应晶体管(RG-MOSFET)非易失性存储器,具有3比特间存储能力
机译:基于非晶铟 - 镓 - 氧化锌薄膜晶体管的1T-1R非易失性存储器件的多级细胞特性研究
机译:GaAs金属 - 氧化物 - 半导体基于非易失性闪存装置,具有INAS量子点作为电荷存储节点
机译:用于非易失性存储器的羰基掺杂过渡金属氧化物的物理性质
机译:基于海绵的还原型氧化石墨烯和过渡金属氢氧化物的混合材料的开发用于混合储能装置
机译:基于海绵的还原型氧化石墨烯和过渡金属氢氧化物的混合材料的开发,用于混合储能装置
机译:过渡金属氧化物,非晶半导体,半导体玻璃,Ovshinsky效应和其他开关(存储)材料 - 文献综述