THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER AND ALUMINIUM OXIDE LAYER

摘要

The present invention provides a vertical nonvolatile memory device and a thin film transistor. The vertical nonvolatile memory device includes an insulating pillar extending in an upper direction of the substrate. Interlayer insulating layers and control gate patterns alternately stacked on the side of the insulating pillar are disposed. Between the insulating pillar and the control gate patterns, a polycrystalline metal oxide channel layer extending along the insulating pillar is stacked on the insulating pillar. A tunnel insulating film, a charge trapping layer, and a blocking insulating film, which are aluminum oxide films, are sequentially disposed between the polycrystalline metal oxide channel layer and the respective control gate patterns.