A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-κ and Metal Gate on Si

摘要

The fabrication methods and characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) stacked complementary metal oxide semiconductor (CMOS) inverters were demonstrated the feasibility for high performance logic circuit applications