Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

摘要

We developed fully depleted silicon on thin buried oxide (SOTB) complementary metal oxide semiconductor field effect transistors (CMOSFETs) with a polycrystalline-silicon (poly-Si)/TiN/SiON gate stack. We investigated the flat-band voltage (V_(fb)) shift of the gate stack for the threshold voltage (V_(th)) symmetry of SOTB CMOSFETs. We found that the V_(fb) shift depended on both TiN thickness and thermal load. Thicker TiN above 15nm is preferable for obtaining the midgap value of V_(th), with considering the thermal budget of the SOTB process. We also integrated the gate stack into SOTB CMOSFETs, which showed that the V_(th), roll-off characteristics corresponded to the proper control of the effective work function by considering how the impurity-related work function modulation affects. Narrow channel characteristics of the TiN-gate SOTB CMOSFETs were also shown to be superior to fully silicided gate SOTB devices due to the less silicidation.