ELECTRO-DEPOSITING METAL LAYERS OF UNIFORM THICKNESS ON SEMICONDUCTING WAFERS

摘要

An apparatus for the electrodeposition of metals or metal alloys on semiconductor wafers is described. The apparatus includes plating cell, an anode disposed within the plating cell, a cathode comprising a semiconductor wafer positioned with the surface to be electroplated facing and in spaced-apart relation to the anode, a power supply providing electrical contact between the anode and the cathode, a hollow bar positioned mean the cathode having a series of spaced-apart holes facing the cathode and arranged in a line extending from one end or near one end of the cross bar to the other end or near end of the cross bar and means for rotating either the cathode or the hollow bar about a central axis to spray the surface of the semiconducting wafer to be plated continuously and repeatedly as the cathode or the solution spraying means rotates.