GROWING METHOD INHIBITING CARBON INCLUSION DEFECTS IN SILICON CARBIDE MONOCRYSTALS

摘要

The present invention relates to the technical field of crystal growing, and specifically relates to a growing method inhibiting carbon inclusion defects in silicon carbide monocrystals. The method described in the present invention divides growth into two phases, inhibiting volatilization and escape of a silicon component by means of controlling different pressures, decreasing, or even eliminating, formation of inclusions; the growing method described in the present invention does not require addition of an external substance to growing raw materials, as inhibition of carbon inclusion formation may be realized by means of only simple adjustments of growing techniques, the method being easily implemented and relatively low-cost.