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Effect of Carbon Addition and Mixture Method on the Microstructure and Mechanical Properties of Silicon Carbide

机译:碳添加和混合方法对碳化硅微观结构和力学性能的影响

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摘要

High dense (>99% density) SiC ceramics were produced with addition of C and B4C by spark plasma sintering method at 1950 °C under 50 MPa applied pressure for 5 min. To remove the oxygen from the SiC, it was essential to add C. Two different mixture method were used, dry mixing (specktromill) and wet mixing (ball milling). The effect of different levels of carbon additive and mixture method on density, microstructure, elastic modulus, polytype of SiC, Vickers hardness, and fracture toughness were examined. Precisely, 1.5 wt.% C addition was sufficient to remove oxide layer from SiC and improve the properties of dense SiC ceramics. The highest hardness and elastic modulus values were 27.96 and 450 GPa, respectively. Results showed that the 4H polytype caused large elongated grains, while the 6H polytype caused small coaxial grains. It has been observed that it was important to remove oxygen to achieve high density and improve properties of SiC. Other key factor was to include sufficient amount of carbon to remove oxide layer. The results showed that excess carbon prevented to achieve high density with high elastic modulus and hardness.
机译:通过在50MPa施加压力下在1950℃下通过火花等离子体烧结方法加入C和B4C,在50MPa施加压力下加入高密度(> 99%密度)SiC陶瓷。为了从SiC中除去氧气,必须加入C.使用两种不同的混合物方法,干混(Specktromill)和湿混合(球磨)。检查了不同水平的碳添加剂和混合方法对密度,微观结构,弹性模量,SiC,维氏硬度和断裂韧性的密度,微观结构,弹性模量,Polytype的影响。精确地,1.5重量%。%C添加足以从SiC中除去氧化物层,提高致密SiC陶瓷的性质。最高硬度和弹性模量值分别为27.96和450GPa。结果表明,4H多型引起大的细长晶粒,而6H多型引起小同轴晶粒。已经观察到,除去氧气以实现高密度并改善SiC的性能非常重要。其他关键因素是包括足够量的碳以除去氧化物层。结果表明,过量的碳防止了高密度高,具有高弹性模量和硬度。

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