SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE

摘要

A first conductive source region (8) is configured such that a portion thereof on a second conductive base region (6) side has a lower impurity concentration than a portion thereof on the side of the surface which is brought into ohmic contact with a source electrode (15). For example, the source region (8) is configured such that a first source region (8a) has a relatively low concentration and a second source region (8b) has a higher concentration than the first source region. Thus, a saturation current value during load short-circuiting can be reduced, and the short-circuit capacity of this SiC semiconductor device can be increased.