GaAs DEVICE FOR SINGLE CRYSTAL GROWTH OF GaAs

摘要

The present invention relates to an apparatus for growing a GaAs single crystal. More particularly, the present invention relates to the apparatus for growing a GaAs single crystal, which comprises: a tube-shape ampoule with vacuum inside; a crucible resting on a support under the ampoule and storing a raw material of GaAs; a heating unit comprising a plurality of heaters for heating the ampoule around the ampoule; and a cover unit sealing the crucible at an upper portion of the crucible. The temperature gradient of the growth surface of the GaAs single crystal can be minimized through the crucible cover unit of the present invention.