Department of Electrical and Computer Engineering, National University of Singapore, Silicon Nano Device Laboratory, Singapore, 119260, Singapore;
rnDepartment of Electrical and Computer Engineering, National University of Singapore, Silicon Nano Device Laboratory, Singapore, 119260, Singapore;
rnDepartment of Electrical and Computer Engineering, National University of Singapore, Silicon Nano Device Laboratory, Singapore, 119260, Singapore;
rnDepartment of Electrical and Computer Engineering, National University of Singapore, Silicon Nano Device Laboratory, Singapore, 119260, Singapore;
机译:GaAs(100),(110)和(111)衬底上的Ge外延膜,用于CMOS异质结构集成的应用
机译:在单晶Cu(111)衬底上外延生长均匀的单晶AlN膜
机译:全氧化物器件钙钛矿基材上高晶尖晶石铁氧体薄膜外延生长
机译:CMOS器件集成的GaAs基板上单晶GE膜的外延生长
机译:分子束外延生长以及微波和光子器件的制造,用于在替代基板上进行混合集成。
机译:在全氧化物器件的钙钛矿衬底上外延生长高结晶尖晶石铁氧体薄膜
机译:大气压化学气相沉积单晶镁质基材上的镁膜外延生长