MEMORY DEVICE BY USING BLOCH-POINT STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The present invention provides a memory device using a Bloch-point structure, comprising: a first ferromagnetic layer with a predetermined pattern; a non-magnetic layer formed on the first ferromagnetic layer; a first antiferromagnetic layer horizontally formed in a manner of burying the first ferromagnetic layer and the non-magnetic layer and exposing an upper part of the non-magnetic layer; a second antiferromagnetic layer formed on the first ferromagnetic layer and the first antiferromagnetic layer; and a second antiferromagnetic layer formed on the second ferromagnetic layer, wherein the memory device partitions an upper part of the first ferromagnetic layer and the non-magnetic layer into a first area and a second area where the second area is a remaining portion except the first area on the upper part. The present invention can read magnetized direction-based information recorded on the magnetic layer at high speed.