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Manufacturing Effects on Data Retention of Nonvolatile Memory Devices

机译:制造对非易失性存储设备数据保留的影响

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Charge is stored on floating gates, and heat coupled with a loss of charge can cause a "bit-flip." Is this a significant problem? Many automotive electronics have flash-based microcontrollers in mission critical applications. The last thing an automotive company or EMS vendor wants is a recall due to problems with data retention in one of the control modules. As such, some engineers are reluctant to upgrade from slow (and costly) boundary scan or other in-sys-tem programming methods because they permit post-soldering programming. Our position: it's not a problem. Let's review why. Every semiconductor manufacturer that produces non-volatile memory (NVM) has to verify that data retention for a new design is sufficient and establish a quality procedure for monitoring data retention in production. Typically they will test for loss of data at elevated temperatures; then, using a relationship called the T-Model, calculate the equivalent lifetime for normal temperature ranges.
机译:电荷存储在浮栅上,热量和电荷损失会导致“位翻转”。这是一个重大问题吗?许多汽车电子在关键任务应用中都具有基于闪存的微控制器。汽车公司或EMS供应商想要的最后一件事是由于其中一个控制模块中的数据保留问题而召回。因此,一些工程师不愿从慢速(且昂贵)的边界扫描或其他系统内编程方法升级,因为它们允许进行焊后编程。我们的立场:这不是问题。让我们回顾一下原因。每个生产非易失性存储器(NVM)的半导体制造商都必须验证新设计的数据保留是否足够,并建立质量程序来监控生产中的数据保留。通常,他们将测试高温下的数据丢失;然后,使用称为T模型的关系,计算正常温度范围的等效寿命。

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