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METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE METHOD OF ERASING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME
METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE METHOD OF ERASING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME
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机译:非易失性存储器中的数据写入方法擦除相同性能的非易失性存储器中的数据和非易失性存储器中的数据
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摘要
According to the present invention, in a data storage method of a nonvolatile memory device, the nonvolatile memory device comprises a plurality of cell strings, in which a plurality of memory cells are disposed in a vertical direction, respectively. A program target page connected to one of a plurality of word lines is divided into a plurality of subpages each of which includes memory cells that are not physically adjacent. A program operation is sequentially performed on each of the plurality of subpages. A program verification operation is performed as a whole on the program target page including the plurality of subpages.
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