Integrated photodetector with direct binning pixels

摘要

The integrated circuit includes a photodetection area configured to receive incident photons. This photodetection region is configured to generate a plurality of charge carriers in response to incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier isolation structure configured to selectively direct charge carriers in the plurality of charge carriers into the at least one charge carrier storage region based on the times at which the charge carriers are generated.