Frame-transfer CMOS active pixel sensor with pixel binning

摘要

The first frame-transfer CMOS active pixel sensor (APS) is reported. The sensor architecture integrates an array of active pixels with an array of passive memory cells. Charge integration amplifer-based readout of the memory cells permits binning of pixels for variable resolution imaging. A 32/spl times/32 element prototype sensor with 24-/spl mu/m pixel pitch was fabricated in 1.2-/spl mu/m CMOS and demonstrated.