Pull condition calculation program of silicon single crystal, method of improving hot zone of silicon single crystal and silicon single crystal growing method

摘要

The pulling condition calculation program sets a plurality of pulling conditions corresponding to the solid-liquid interface height and the distance between the liquid surface of the silicon single crystal and the heat shield plate, and for each pulling condition, the heat flux q (W / m ² ) and the crystal surface Calculating the temperature T (S2), setting the reference temperature Tref given by the following equation (1), setting the solid-liquid interface shape as the boundary condition, and recalculating the temperature distribution in the crystal (S3). Calculating the average stress in the silicon single crystal (S4), calculating the defect distribution in the pulling direction based on the average stress and the temperature distribution in the crystal (S5), obtaining a defect free area in the pulling direction (S6), The computer generates a step S8 of generating a contour line of the size of the defect-free area on the two-dimensional map of the distance and the liquid interface height.