SILICON SINGLE CRYSTAL PULLING CONDITION CALCULATION PROGRAM, SILICON SINGLE CRYSTAL HOT ZONE IMPROVEMENT METHOD, AND SILICON SINGLE CRYSTAL GROWING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling condition calculation program capable of determining an optimal heat shielding plate distance and a solid/liquid interface height.SOLUTION: Provided is a pulling condition calculation program that causes a computer to execute the following steps: a step S2 of setting a plurality of pulling conditions according to a solid/liquid interface height and a distance between a liquid surface of a silicone single crystal and a heat shielding plate, and calculating a heat flux q (W/m) and a crystal surface temperature (T) for each of the pulling conditions; a step of setting a reference temperature Tref given by a formula (1) and a solid/liquid interface shape as boundary conditions; a step S3 of recalculating a crystal internal temperature distribution; a step S4 of calculating an average stress within the silicon single crystal; a step S5 of calculating a pulling direction defect distribution based on the average stress and the crystal internal temperature distribution; a step S6 of determining a defect-free region in the pulling direction; and a step S8 of generating contour lines of the size of the defect-free region on a two-dimensional map of the distance and the solid/liquid interface height.SELECTED DRAWING: None