SILICON SINGLE CRYSTAL PULLING CONDITION CALCULATION PROGRAM, SILICON SINGLE CRYSTAL HOT ZONE IMPROVEMENT METHOD, AND SILICON SINGLE CRYSTAL GROWING METHOD

摘要

Provided is a pulling condition calculation program that causes a computer to execute the following: a step (S2) for setting a plurality of pulling conditions according to a solid/liquid interface height and a distance between a liquid surface of a silicone single crystal and a heat shielding plate, and calculating a heat flux (q) (W/m²) and a crystal surface temperature (T) for each pulling condition; a step for setting a reference temperature (Tref) given in a formula (1) and a solid/liquid interface shape as boundary conditions; a step (S3) for recalculating a crystal internal temperature distribution; a step (S4) for calculating an average stress within the silicon single crystal; a step (S5) for calculating a pulling direction defect distribution on the basis of the average stress and the crystal internal temperature distribution; a step (S6) for finding a defect-free region in the pulling direction; and a step (S8) for generating a contour line of the size of the defect-free region on a two-dimensional map of the distance and the solid/liquid interface height.