ESD SCR SCR device for protecting ESD

摘要

A SCR device for protecting ESD includes an epitaxial layer provided on a p-type semiconductor substrate and having a p-type conductivity, device isolation layers provided on the epitaxial layer and separating the epitaxial layer into an anode region and a cathode region, a first well having n-type conductivity provided in the epitaxial layer of the anode region, a first impurity region provided on the surface of the first well and having a high concentration p-type conductivity connected to the anode terminal; a second well having p-type conductivity provided in the epitaxial layer of the cathode region, a second impurity region provided on the surface of the second well and having a high concentration n-type conductivity connected to the cathode terminal; and a floating well embedded in the epitaxial layer and having n-type conductivity. Gain can be improved by reducing vertical current.