首页> 外国专利> SiC COMPOSITTE INCLUDING CARBON NANOFIBER UNIFORMLY GROWN ON SURFACE OF SiC AND METHOD FOR FABRICATING THE SAME

SiC COMPOSITTE INCLUDING CARBON NANOFIBER UNIFORMLY GROWN ON SURFACE OF SiC AND METHOD FOR FABRICATING THE SAME

机译:包含均匀生长在SiC表面的碳纳米纤维的SiC复合材料及其制造方法

摘要

One embodiment of the invention is a support comprising silicon carbide; And a carbon nanofiber layer formed on a surface of the support, wherein the carbon nanofibers are related to a composite chemically bonded to the silicon carbide and a method of manufacturing the same. According to the present invention, by uniformly growing the carbon nanofibers on the surface of the silicon carbide in the process of converting the silicon carbide precursor to silicon carbide, it does not require a costly separate process for growing carbon nanofibers, remarkable process efficiency and economic efficiency Can be improved. In addition, the composite formed according to the present invention is strongly bonded to the carbon nanofibers on the silicon carbide support through a chemical bond can improve the surface adhesion, it is possible to significantly increase the various physical properties required in various applications.
机译:本发明的一个实施方案是一种包含碳化硅的载体。以及形成在支撑体表面上的碳纳米纤维层,其中所述碳纳米纤维与化学键合至碳化硅的复合物及其制造方法有关。根据本发明,通过在将碳化硅前体转化为碳化硅的过程中在碳化硅的表面上均匀生长碳纳米纤维,不需要用于生长碳纳米纤维的昂贵的单独过程,显着的过程效率和经济性。效率可以提高。另外,根据本发明形成的复合材料通过化学键牢固地结合到碳化硅载体上的碳纳米纤维,可以改善表面粘合性,可以显着提高各种应用所需的各种物理性能。

著录项

  • 公开/公告号KR102000216B1

    专利类型

  • 公开/公告日2019-09-27

    原文格式PDF

  • 申请/专利权人 한국세라믹기술원;

    申请/专利号KR20170167256

  • 发明设计人 신동근;

    申请日2017-12-07

  • 分类号D06M11/74;D01F9/08;

  • 国家 KR

  • 入库时间 2022-08-21 11:48:11

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