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Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method

机译：CF-pVT法在（0001）α-siC标称表面上生长大面积无DpB（111）β-siC厚层

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D. Chaussende; L. Latu-romain; L. Auvray; M. Ucar; M. Pons; R. Madar;
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年度 2016
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入库时间 2022-08-20 20:58:51

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专利

1. Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces [J] . N. D. Bassim, M. E. Twigg, C. R. Eddy Jr., Applied Physics Letters . 2005,第2期

机译：降低在无台阶（0001）4H-SiC台面表面上生长的均匀GaN层中的位错密度
2. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy [J] . Florian Chaumeton, Sébastien Gauthier, David Martrou AIP Advances . 2015,第6期

机译：使用氨分子束外延法在4H-SiC（0001）和Si（111）衬底上以低生长速率生长的高质量AlN（0001）层的原位NC-AFM测量
3. Ferrimagnetic Mn_4N(111) layers grown on 6H-SiC(0001) and GaN(0001) by reactive molecular-beam epitaxy [J] . S. Dhar, O. Brandt, K. H. Ploog Applied Physics Letters . 2005,第11期

机译：反应分子束外延在6H-SiC（0001）和GaN（0001）上生长的亚铁磁性Mn_4N（111）层
4. Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method [C] . D. Chaussende, L. Latu-Romain, L. Auvray, European Conference on Silicon Carbide and Related Materials . 2005

机译：大面积DPB Free（111）β-SiC厚层在（0001）α-SiC标称表面上通过CF-PVT方法生长
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001) [O] . Hui Deng, Katsuyoshi Endo, Kazuya Yamamura -1

机译：表面改性和磨料抛光之间的竞争：控制4H-SiC表面原子结构的方法（0001）
7. Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method [O] . Laurence Latu-Romain, Didier Chaussende, Carole Balloud, 2006

机译：通过CF-PVT法在4H-SiC上生长的体积<111> 3C-SiC单晶的表征

Large Area DPB Free (111) β-SiC Thick Layer Grown on (0001) α-SiC Nominal Surfaces by the CF-PVT Method

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