Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method

摘要

Method and device for depositing an epitaxial layer on a front side of a semiconductor wafer of monocrystalline material. The method comprises providing the semiconductor wafer; disposing the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature by means of thermal radiation directed to a front and a back side of the semiconductor wafer; passing a deposition gas over the front side of the semiconductor wafer; and selectively reducing the intensity of a portion of the thermal radiation directed toward the backside of the semiconductor wafer, thereby increasing first semiconductor portion growth portions of the wafer at a uniform wafer epitaxial growth rate because of the orientation of the monocrystalline material second sub-areas to be heated weaker.