CMOS DEVICE INCLUDING PMOS METAL GATE WITH LOW THRESHOLD VOLTAGE

摘要

A PMOS gate structure will be described. The PMOS gate structure includes a trench, a high-k metal layer on a bottom surface and sidewalls of the trench, and a fluorine-free tungsten layer on the surface of the high-k metal. The PMOS gate structure also includes a metal layer in a space in the n-type work function metal.