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Semiconductor wafer with monocrystalline central region and polycrystalline edge region and process for forming thereof
Semiconductor wafer with monocrystalline central region and polycrystalline edge region and process for forming thereof
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机译:具有单晶中心区和多晶边缘区的半导体晶片及其形成方法
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摘要
A semiconductor wafer can include a substrate, a poly template layer, and a semiconductor layer. The substrate has a central region and an edge region, the poly template layer is disposed along a peripheral edge of the substrate, and a semiconductor layer over the central region, wherein the semiconductor layer is monocrystalline. In an embodiment, the poly template layer and the monocrystalline layer are laterally spaced apart from each other by an intermediate region. In another embodiment, the semiconductor layer can be a III-nitride including aluminum. A process of forming the substrate can include forming a patterned poly template layer within the edge region of the primary surface and forming a semiconductor layer over the primary surface, wherein the semiconductor layer is monocrystalline within the central region and polycrystalline within the edge region. Another process of forming the substrate can include forming a semiconductor layer over the primary surface and removing the portion of the semiconductor layer on the a poly template layer so that the semiconductor layer is spaced apart from an edge of the substrate.
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