首页> 外国专利> Semiconductor wafer with monocrystalline central region and polycrystalline edge region and process for forming thereof

Semiconductor wafer with monocrystalline central region and polycrystalline edge region and process for forming thereof

机译:具有单晶中心区和多晶边缘区的半导体晶片及其形成方法

摘要

A semiconductor wafer can include a substrate, a poly template layer, and a semiconductor layer. The substrate has a central region and an edge region, the poly template layer is disposed along a peripheral edge of the substrate, and a semiconductor layer over the central region, wherein the semiconductor layer is monocrystalline. In an embodiment, the poly template layer and the monocrystalline layer are laterally spaced apart from each other by an intermediate region. In another embodiment, the semiconductor layer can be a III-nitride including aluminum. A process of forming the substrate can include forming a patterned poly template layer within the edge region of the primary surface and forming a semiconductor layer over the primary surface, wherein the semiconductor layer is monocrystalline within the central region and polycrystalline within the edge region. Another process of forming the substrate can include forming a semiconductor layer over the primary surface and removing the portion of the semiconductor layer on the a poly template layer so that the semiconductor layer is spaced apart from an edge of the substrate.
机译:半导体晶片可以包括衬底,多晶硅模板层和半导体层。衬底具有中心区域和边缘区域,聚模板层沿着衬底的外围边缘设置,并且在中心区域上方具有半导体层,其中半导体层是单晶的。在一个实施例中,聚模板层和单晶层通过中间区域彼此横向地间隔开。在另一个实施例中,半导体层可以是包括铝的III族氮化物。形成衬底的过程可以包括在主表面的边缘区域内形成图案化的多晶硅模板层,以及在主表面上方形成半导体层,其中半导体层在中心区域内是单晶的并且在边缘区域内是多晶的。形成衬底的另一种工艺可以包括在主表面上形成半导体层并去除多晶硅模板层上的半导体层的一部分,以使半导体层与衬底的边缘间隔开。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号