首页> 外国专利> Production of a semiconductor component e.g. transistor comprises forming recesses in a wafer from the rear side below active regions. processing the regions of wafer exposed on base of the recesses, and cutting the wafers above the lattice

Production of a semiconductor component e.g. transistor comprises forming recesses in a wafer from the rear side below active regions. processing the regions of wafer exposed on base of the recesses, and cutting the wafers above the lattice

机译:半导体元件的生产例如晶体管包括在晶片中在有源区下方从后侧在晶片中形成凹槽。处理在凹槽底部露出的晶圆区域,并在晶格上方切割晶圆

摘要

Production of semiconductor component comprises: preparing wafer having active regions for semiconductor components; forming recesses in the wafer from the wafer rear side below the active regions so that supporting lattice of wafer material remains between recesses; processing regions of the wafer exposed on base of the recesses; and cutting wafers above lattice to form semiconductor components. Production of a semiconductor component comprises: preparing a wafer with a front side (101) and a rear side (102), in which a number of active regions (20) for semiconductor components are provided; forming recesses (112) in the wafer from the rear side below the active regions so that supporting lattice (110) of wafer material remains between the recesses; processing the regions of the wafer exposed on the base (103) of the recesses; and cutting the wafers above the lattice to form number of semiconductor components. Preferred Features: The recesses are produced by etching. The wafers have crevice regions between the active regions. The crevice regions are removed on cutting the wafers.
机译:半导体组件的生产包括:制备具有用于半导体组件的有源区的晶片;以及制备用于半导体组件的晶片。在有源区下方从晶片后侧在晶片中形成凹槽,以使晶片材料的支撑晶格保留在凹槽之间。在凹槽的底部上暴露的晶片的处理区域;在晶格上方切割晶片以形成半导体组件。半导体组件的生产包括:制备具有正面(101)和背面(102)的晶片,其中提供了多个用于半导体组件的有源区(20);在有源区下方从后侧在晶片中形成凹槽(112),以使晶片材料的支撑晶格(110)保留在凹槽之间;处理晶片的在凹槽的底部(103)上暴露的区域;在晶格上方切割晶片以形成多个半导体组件。优选特征:凹槽通过蚀刻产生。晶片在有源区之间具有缝隙区。在切割晶片时去除缝隙区域。

著录项

  • 公开/公告号DE10129346A1

    专利类型

  • 公开/公告日2003-01-09

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001129346

  • 发明设计人 RUEB MICHAEL;

    申请日2001-06-19

  • 分类号H01L21/306;H01L21/336;H01L21/784;H01L29/78;H01L21/301;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:54

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