LITHOGRAPHY METHOD AND LITHOGRAPHY DEVICE FOR COMPONENTS AND CIRCUITS HAVING MICROSCALE AND NANOSCALE STRUCTURAL DIMENSIONS

摘要

The invention relates to a lithography method and a lithography device, wherein an electric field created by a scanning probe and a field-emission/tunneling/Faraday electron flow resulting therefrom are used to create a fine structure of a resist layer. A rough structure of the same resist layer is created from the fine structure by means of a radiation-based lithography method or a non-radiation-based lithography method in the form of nanoimprint lithography. The rough structure and the fine structure are created directly in the same lithography area or overlapping. The device is designed in such a way that the position of the rough structure can be detected by means of the scanning probe and the fine structure can be aligned very precisely therewith. This enables a precise overlay of the fine structure with the rough structure.