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首页> 外文期刊>Journal of Manufacturing Processes >Fabrication of nanoscale to microscale 2.5D square patterns on metallic films by the coupling AFM lithography
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Fabrication of nanoscale to microscale 2.5D square patterns on metallic films by the coupling AFM lithography

机译:通过耦合AFM光刻在金属膜上制备纳米级到微米级的2.5D正方形图案

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摘要

The coupling AFM lithography is innovatively developed to fabricate the controllable 2.5D area structures on the conductive sample surface with the nanoscale resolution, which has wide applications in the fabrication of various nanodevices. The AFM probe functions as both the cutting tool and the electrode tool during the coupling AFM lithography processes. Compared to the conventional mechanical AFM lithography or electric AFM lithography, which merely applies force load or bias voltage, the coupling AFM lithography owns the superior advantages of higher material removal rate, lower surface roughness and lower threshold bias voltage. The nanoscale to microscale 2.5D square patterns in the depths of 6-80 nm could be generated on the metallic thin film samples, such as copper and platinum under the coupling effects of mechanical force and electric field. The machining depth and surface roughness is tunable by the distinctive machining parameter settings. The underlying machining mechanisms are attributed to the coupling influences of the electric field induced electric discharge and possible annealing behavior, along with the mechanical force induced surface indentation and scratching.
机译:原子力显微镜(AFM)耦合光刻技术经过创新开发,可在具有纳米级分辨率的导电样品表面上制造可控制的2.5D面积结构,在各种纳米器件的制造中具有广泛的应用。在耦合AFM光刻过程中,AFM探针既充当切割工具,又充当电极工具。与仅施加力负载或偏置电压的常规机械AFM光刻或电动AFM光刻相比,耦合AFM光刻具有较高的材料去除率,较低的表面粗糙度和较低的阈值偏置电压的优越优势。在机械力和电场的耦合作用下,可以在诸如铜和铂之类的金属薄膜样品上生成深度范围为6-80 nm的纳米级到微米级的2.5D正方形图案。加工深度和表面粗糙度可通过独特的加工参数设置进行调整。潜在的机械加工机理归因于电场感应的放电和可能的退火行为以及机械力引起的表面压痕和刮擦的耦合影响。

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