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Positive and Negative Nano-patterning Methods on Resist Films by Changing the Polarity of a Tip Bias Voltage in AFM Lithography

机译:通过改变AFM光刻中的尖端偏置电压的极性在抗蚀剂膜上进行正负纳米构图的方法

摘要

PURPOSE: A positive and negative nano-patterning methods on resist films by changing the polarity of voltage are provided to form arbitrary embossed and positive and negative nano-patterns on an organic thin film by changing only one condition of a series of processes. CONSTITUTION: A probe and the polarity of a voltage applied across a thin film and a substrate are changed in a series of processes to embody the arbitrary embossed and positive and negative nano-patterns. Resist used in the abovementioned process is organic, inorganic or mixed resist thereof, including resist fabricated through a self-assembly method, a Langmuir-Blodgett method and a spin-coating method.
机译:目的:提供一种通过改变电压极性在抗蚀剂膜上进行正负纳米构图的方法,以通过仅改变一系列工艺中的一个条件,在有机薄膜上形成任意压纹和正负纳米构图。组成:探针和施加在薄膜和基板上的电压的极性在一系列过程中发生了变化,以体现出任意的压花和正负纳米图案。在上述方法中使用的抗蚀剂是有机,无机或它们的混合抗蚀剂,包括通过自组装方法,Langmuir-Blodgett方法和旋涂方法制造的抗蚀剂。

著录项

  • 公开/公告号KR100435516B1

    专利类型

  • 公开/公告日2004-06-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010063818

  • 发明设计人 이해성;이해원;김승애;안상정;

    申请日2001-10-16

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:03

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