IGBT DEVICE AND METHOD FOR PACKAGING WHOLE-WAFER IGBT CHIP

摘要

An IGBT device and a method for packaging a whole-wafer IGBT chip. The IGBT device comprises: an entire wafer IGBT chip (33), the upper surface thereof comprising a central gate connection zone (13) and a plurality of emitter connection zones (15, 25) surrounding the central gate connection zone (13), and the lower surface thereof comprising a collecting zone, wherein the emitter connection zones (15, 25) located on the surface of a failure cellular zone of the chip are thinned; a collector washer (32) which is fixed on the lower surface of the chip (33), and an emitter washer (34) which is fixed on the upper surface of the chip (33); a collector electrode (31) which is electrically contacted with the collector washer (32), and an emitter electrode (36) which is electrically contacted with the emitter washer (34); and a gate leading wire (37) which is connected to the central gate connection zone (13), wherein the gate leading wire (37) is insulated from the emitter washer (34) and the emitter electrode (36). The IGBT device avoids the harmful effect of the failure cellular zone in the whole-wafer chip on the performance of the IGBT device.