1700V IGBT Module Employs Non-Epitaxial PT chips, Low Inductance Package

摘要

While punch throughs (PTs) are the preferred power device for a growing segment of industrial power conversion applications requiring operation from ac line voltages of 575Vac to 690Vac, historically, 1700V IGBTs based on a non punch through (NPT) structure were popular. For the NPT device to have stable leakage current at such high blocking voltages, a thick n~- layer is necessary. However, the thick n" layer leads to high losses due to increased V_(CE(sat)) and tail current.