POWER DETECTOR WITH ALL TRANSISTORS BEING BIPOLAR JUNCTION TRANSISTORS

摘要

A power detector (10, 10B) has a signal input terminal (Pin), N limiting amplifiers (30A, 30B, 30C, 30D), N rectifiers (40A, 40B, 40C, 40D) and a signal output end. N is an integer greater than 1. The signal input terminal receives an input signal (Si), and the signal output end outputs a detection signal (VPD). The N limiting amplifiers generate N amplified signals (Vop1, Vop2, Vop3, Vop4) according to N attenuated signals (Vinp1, Vinp2, Vinp3, Vinp4) having different attenuation. Each rectifier (40A, 40B, 40C, 40D) receives a corresponding amplified signal and outputs a rectified signal. The detection signal (VPD) is associated with the sum of N rectified signals (Io1, Io2, Io3, Io4) outputted from the N rectifiers (40A, 40B, 40C, 40D), and all transistors of the power detector (10, 10B) are bipolar junction transistors.