A Group III nitride-based transistor device comprises a first Group III nitride barrier layer (42) arranged on a Group III nitride channel layer (43), the first Group III nitride barrier layer and the Group III nitride channel layer having differing bandgaps and forming a heterojunction capable of supporting a two dimensional charge gas, a source (45), a gate (46) and a drain (47) on an upper surface of the first Group III nitride barrier layer, a gate recess (50) extending from the upper surface of the first Group III nitride barrier layer into the first Group III nitride barrier layer and a p-doped Group III nitride material (53) arranged in the gate recess and having a first extension (72) extending on the upper surface of the first Group III nitride barrier layer towards the drain. The first extension has a length ld, and 0 nm ≤ ld ≤ 200 nm.
展开▼
机译：基于III族氮化物的晶体管器件包括布置在III族氮化物沟道层（43）上的第一III族氮化物阻挡层（42），第一III族氮化物阻挡层和III族氮化物沟道层具有不同的带隙并形成能够支撑二维电荷气体的异质结，在第一III族氮化物阻挡层的上表面上的源极（45），栅极（46）和漏极（47），从栅极延伸的栅极凹部（50）。将第一III族氮化物阻挡层的上表面分为第一III族氮化物阻挡层和p掺杂的III族氮化物材料（53），该p掺杂的III族氮化物材料设置在栅极凹部中，并具有在硅衬底的上表面上延伸的第一延伸部（72）。第一III族氮化物阻挡层朝向漏极。第一延伸的长度为l d ，且0 nm≤l d ≤200 nm。
展开▼
