首页> 外国专利> High aspect ratio selective lateral etching using periodic passivation and etching

High aspect ratio selective lateral etching using periodic passivation and etching

机译:使用周期性钝化和蚀刻的高深宽比选择性横向蚀刻

摘要

Methods and devices for laterally etching unwanted material from the side walls of concave features are described herein. In various embodiments, the method etches a portion of the side wall, deposits a protective film over the entire portion of the side wall, and repeats the etching and deposition operations until the unwanted material is removed from the entire depth of the concave feature. To do. Each etching operation and each deposition operation may target a specific depth along the side wall of the feature. In some examples, unwanted material is removed from the bottom of the feature upwards, in other cases unwanted material is removed from the top of the feature downwards. Any combination of these may also be used. [Selection diagram] FIG. 2A
机译:本文描述了用于从凹形特征的侧壁横向蚀刻不需要的材料的方法和装置。在各种实施例中,该方法蚀刻侧壁的一部分,在侧壁的整个部分上沉积保护膜,并重复蚀刻和沉积操作,直到从凹入特征的整个深度去除不需要的材料为止。去做。每个蚀刻操作和每个沉积操作可以沿着特征的侧壁瞄准特定深度。在一些示例中,不需要的材料从特征的底部向上去除,在其他情况下,不需要的材料从特征的顶部向下去除。也可以使用这些的任何组合。 [选择图] 2A

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号