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Method for manufacturing silicon carbide epitaxial wafer, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial wafer
Method for manufacturing silicon carbide epitaxial wafer, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial wafer
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机译:碳化硅外延晶片的制造方法,碳化硅半导体装置的制造方法以及碳化硅外延晶片的制造装置
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摘要
A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
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